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2N5339 Datasheet(PDF) 2 Page - Semicoa Semiconductor |
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2N5339 Datasheet(HTML) 2 Page - Semicoa Semiconductor |
2 / 2 page Copyright 2002 Semicoa Semiconductors, Inc. Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N5339 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50 mA 100 Volts Collector-Base Cutoff Current ICBO VCB = 100 Volts 10 µA Collector-Emitter Cutoff Current ICEO VCE = 100 Volts 100 µA Collector-Emitter Cutoff Current ICEX1 ICEX2 VCE = 90Volts, VBE = 1.5Volts VCE =90Volts, VBE = 1.5Volts, TA = 150°C 10 10 µA mA Emitter-Base Cutoff Current IEBO VEB = 6 Volts 100 µA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 IC = 0.5 A, VCE = 2 Volts IC = 2 A, VCE = 2 Volts IC = 5 A, VCE = 2 Volts IC = 2 A, VCE = 2 Volts TA = -55°C 60 60 40 12 240 Base-Emitter Saturation Voltage VBEsat1 VBEsat2 IC = 2 A, IB = 200 mA IC = 5 A, IB = 500 mA 1.2 1.8 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 IC = 2 A, IB = 200 mA IC = 5 A, IB = 500 mA 0.7 1.2 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 500 mA, f = 10 MHz 3 15 Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 250 pF Open Circuit Input Capacitance CIBO VEB = 2 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 1,000 pF Switching Characteristics Delay Time Rise Time td tr IC = 2 A, IB1 = 200 mA 100 100 ns Storage Time Fall Time ts tf IC = 2 mA, IB1=IB2 = 200 mA 2 200 µs ns |
Similar Part No. - 2N5339_02 |
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Similar Description - 2N5339_02 |
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