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2N2218A Datasheet(PDF) 1 Page - Semicoa Semiconductor

Part No. 2N2218A
Description  Silicon NPN Transistor
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Maker  SEMICOA [Semicoa Semiconductor]
Homepage  http://www.semicoa.com/
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2N2218A
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2218AJ)
• JANTX level (2N2218AJX)
• JANTXV level (2N2218AJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 0400
• Reference document:
MIL-PRF-19500/251
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
50
Volts
Collector-Base Voltage
VCBO
75
Volts
Emitter-Base Voltage
VEBO
6
Volts
Collector Current, Continuous
IC
800
mA
Power Dissipation, TA = 25
OC
Derate linearly above 25OC
PT
0.8
4.6
W
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25OC
PT
3.0
17.0
W
mW/
°C
Operating Junction Temperature
TJ
-55 to +200
°C
Storage Temperature
TSTG
-55 to +200
°C
Copyright
 2002
Semicoa Semiconductors, Inc.
Rev. K
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com




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