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2N1893S_02 Datasheet(PDF) 2 Page - Semicoa Semiconductor

Part No. 2N1893S_02
Description  Silicon NPN Transistor
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Maker  SEMICOA [Semicoa Semiconductor]
Homepage  http://www.semicoa.com/
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 2 page
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Copyright
 2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N1893S
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 30 mA
80
Volts
Collector-Emitter Breakdown Voltage
V(BR)CER
IC = 10 mA, RBE = 10 Ω
100
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 120 Volts
VCB = 90 Volts
VCE = 90 Volts, TA = 150
OC
100
10
15
µA
nA
µA
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 7 Volts
VEB = 5 Volts
100
10
µA
nA
On Characteristics
Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 0.1 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts,
TA = -55
OC
20
35
40
20
120
Base-Emitter Saturation Voltage
VBEsat
IC = 150 mA, IB = 15 mA
1.3
Volts
Collector-Emitter Saturation Voltage
VCEsat
IC = 150 mA, IB = 15 mA
5.0
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 10 Volts, IC = 50 mA,
f = 20 MHz
3
10
Short Circuit Forward Current Transfer
Ratio
hFE1
hFE2
f = 1 kHz
VCE = 5 Volts, IC = 1 mA
VCE = 10 Volts, IC = 5 mA
35
45
100
150
Short Circuit Input Impedance
hie
VCB = 10V, IC = 5mA
4
8
Open Circuit Output Admittance
hoe
VCB = 10V, IC = 5mA
0.5
µΩ
Open Circuit reverse Voltage Transfer
Ratio
hre
VCB = 10V, IC = 5mA
1.5x10-4
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
2
15
pF
Switching Characteristics
Pulse Response
ton + toff
30
ns




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