 |
 |
|
| QM100TX1-H |
|
|||||||||||||
 MITSUBISHI
|
| |||||||||||||
|
4 page 
Feb.1999 0 10 0 10 1 10 –3 10 –1 10 –2 10 3 10 2 10 1 10 3 10 2 10 1 10 0 10 0 10 –1 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 Tj=25°C Tj=125°C –1 10 35 7 0 10 23 5 7 1 10 2 0 10 7 5 3 2 1 10 7 5 3 2 2 ts Tj=25°C Tj=125°C IB1=3.0A VCC=300V IC=100A tf 200 0 0 500 400 300 200 100 20 600 800 40 60 80 100 120 140 160 180 700 IB2=–3A 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TC=25°C NON–REPETITIVE 50µs 100µs 10ms 1ms DC 7 5 3 2 7 5 3 2 7 5 3 2 0.1 0.2 0.3 0.4 0.5 0 3 2 7 5 3 2 4 4 4 4 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA COLLECTOR-EMITTER VOLTAGE VCE (V) BASE REVERSE CURRENT –IB2 (A) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A. COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC ( °C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE |
