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HT9200B Datasheet(PDF) 3 Page - Holtek Semiconductor Inc |
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HT9200B Datasheet(HTML) 3 Page - Holtek Semiconductor Inc |
3 / 14 page Approximate Internal Connection Circuits Absolute Maximum Ratings Supply Voltage ..............................VSS -0.3V to VSS+6V Storage Temperature ............................ -50°Cto125°C Input Voltage ................................VSS -0.3 to VDD+0.3V Operating Temperature........................... -20°Cto75°C Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil- ity. Electrical Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage ¾¾ 2.5 ¾ 5.5 V IDD Operating Current 2.5V S/P=VDD,D0~D3=VSS, CE=VSS, No load ¾ 240 2500 mA 5.0V ¾ 950 3000 VIL ²Low² Input Voltage ¾¾ VSS ¾ 0.2VDD V VIH ²High² Input Voltage ¾¾ 0.8VDD ¾ VDD V ISTB Standby Current 2.5V S/P=VDD,CE=VDD, no load ¾¾ 1 mA 5.0V ¾¾ 2 RP Pull-high Resistance 2.5V VOL=0V 120 180 270 k W 5.0V 45 68 100 tDE DTMF Output Delay Time (Parallel Mode) 5V ¾¾ tUP+6 tUP+8 ms VTDC DTMF Output DC Level 2.5V~ 5.5V DTMF Output 0.45VDD ¾ 0.75VDD V ITOL DTMF Sink Current 2.5V VDTMF=0.5V -0.1 ¾¾ mA VTAC DTMF Output AC Level 2.5V Row group, RL=5k W 0.12 0.15 0.18 Vrms ACR Column Pre-emphasis 2.5V Row group=0dB 1 2 3 dB RL DTMF Output Load 2.5V tHD £-23dB 5 ¾¾ k W HT9200A/HT9200B Rev. 1.40 3 August 30, 2004 C M O S O U T C M O S I N P u l l - h i g h C M O S I N O S C I L L A T O R X 1 X 2 E N 1 0 M 2 0 p F 1 0 p F V D D V D D V D D C M O S I N ( F o r D 0 ~ D 3 , C L K , D A T A ) |
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