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SC470EVB Datasheet(PDF) 4 Page - Semtech Corporation |
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SC470EVB Datasheet(HTML) 4 Page - Semtech Corporation |
4 / 31 page 4 2005 Semtech Corp. www.semtech.com SC470 POWER MANAGEMENT Notes: (1) Calculated from package in still air, mounted to 3” x 4.5”, 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards. (2) When the inductor is in continuous and discontinuous conduction mode, the output voltage will have a DC regulation level higher than the error-comparator threshold by 50% of the ripple voltage. This voltage will vary slightly with load and VBAT. (3) Using a current sense resistor, this measurement relates to PGND minus the voltage of the source on the low-side MOSFET. These values guaranteed by the ILIM Source Current and Current Comparator Offset tests. (4) clks = switching cycles. Electrical Characteristics (Cont.) r e t e m a r a Ps n o i t i d n o CC ° 5 2C ° 5 2 1 o t C ° 0 4 -s t i n U n i Mp y Tx a Mn i Mx a M ) . t n o C ( n o i t c e t o r P t l u a F y a l e D tl u a F D G P. w o d n i w D G P e d i s t u o d e c r o f B F0 . 5s µ e g a tl o v r e d n U A C C V d l o h s e r h T ) s i s e r e t s y H V m 0 0 1 ( g n il l a F0 . 47 . 33 . 4V t u o k c o L e r u t a r e p m e T r e v O0 1 O s i s e r e t s y H C5 6 1C s t u p t u O / s t u p n I e g a tl o V w o L t u p n I c i g o Lw o l V S P / N E2 . 1V e g a tl o V h g i H t u p n I c i g o Lw o l V S P , h g i H N E ) g n it a o l F n i P ( 0 . 2V e g a tl o V h g i H t u p n I c i g o Lh g i h V S P / N E1 . 3V t u p n I e v a S r e w o P / e l b a n E e c n a t s i s e R A C C V o t p u ll u P R5 . 1M Ω A S S V o t n w o d ll u P R1 M Ω t r a t S t f o S e m i T p m a R t r a t S - tf o Sh g i h D G P o t h g i h V S P / N E0 4 4s k l c ) 4 ( e m i T k n a l B e g a tl o V - r e d n Uh g i h V U o t h g i h V S P / N E0 4 4s k l c ) 4 ( s r e v i r D e t a G e m i T d a e Dg n i s ir L D r o H D0 3s n e c n a t s i s e R n w o D -l l u P L Dw o l L D8 . 06 . 1 Ω t n e r r u C k n i S L DV 5 . 2 = L D1 . 3A e c n a t s i s e R p U -l l u P L Dh g i h L D2 4 Ω t n e r r u C e c r u o S L DV 5 . 2 = L D3 . 1A e c n a t s i s e R n w o D -l l u P H DV 5 = X L - T S B , w o l H D2 4 Ω e c n a t s i s e R p U -l l u P H DV 5 = X L - T S B , h g i h H D2 4 Ω t n e r r u C e c r u o S / k n i S H DV 5 . 2 = H D3 . 1A |
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