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VP0300L Datasheet(PDF) 1 Page - Supertex, Inc |
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VP0300L Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 2 page 7-227 9 7 VP0300 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Note: See Package Outline section for dimensions. P-Channel Enhancement-Mode Vertical DMOS FETs Package Options Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C * Distance of 1.6 mm from case for 10 seconds. Applications ■ ■ Motor controls ■ ■ Converters ■ ■ Amplifiers ■ ■ Switches ■ ■ Power supply circuits ■ ■ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Features ■ ■ Free from secondary breakdown ■ ■ Low power drive requirement ■ ■ Ease of paralleling ■ ■ Low C ISS and fast switching speeds ■ ■ Excellent thermal stability ■ ■ Integral Source-Drain diode ■ ■ High input impedance and high gain ■ ■ Complementary N- and P-channel devices BVDSS /RDS(ON) ID(ON) BV DGS (max) (min) TO-92 -30V 2.5Ω -1.5A VP0300L Order Number / Package Ordering Information TO-92 S G D – OBSOLETE – |
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