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VP0300L Datasheet(PDF) 1 Page - Supertex, Inc

Part # VP0300L
Description  P-Channel Enhancement-Mode Vertical DMOS FETs
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

VP0300L Datasheet(HTML) 1 Page - Supertex, Inc

  VP0300L Datasheet HTML 1Page - Supertex, Inc VP0300L Datasheet HTML 2Page - Supertex, Inc  
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VP0300
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature*
300°C
* Distance of 1.6 mm from case for 10 seconds.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
BVDSS /RDS(ON)
ID(ON)
BV
DGS
(max)
(min)
TO-92
-30V
2.5Ω
-1.5A
VP0300L
Order Number / Package
Ordering Information
TO-92
S G D
– OBSOLETE


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