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VP1509 Datasheet(PDF) 1 Page - Supertex, Inc |
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VP1509 Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 2 page 1 VP1504/VP1506/VP1509 Advanced DMOS Technology This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. P-Channel Enhancement-Mode Vertical DMOS FETs Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low C ISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Order Number / Package BV DSS /RDS(ON) I D(ON) BVDGS (max) (min) Die† -40V 8.0Ω -0.5A VP1504NW † MIL visual screening available. Ordering Information Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ±20V Operating and Storage Temperature -55OC to +150 C Soldering Temperature* 300 C * Distance of 1.6 mm from case for 10 seconds. O O -0.5A VP1506NW -0.5A VP1509NW -60V 8.0Ω -90V 8.0Ω |
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