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VP1504/VP1506/VP1509

Advanced DMOS Technology

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

P-Channel Enhancement-Mode

Vertical DMOS FETs

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

❏ Low C

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Order Number / Package

BV

I

D(ON)

(max)

(min)

-40V

8.0Ω

-0.5A

VP1504NW

† MIL visual screening available.

Ordering Information

Absolute Maximum Ratings

Drain-to-Source Voltage

BV

DSS

Drain-to-Gate Voltage

BV

DGS

Gate-to-Source Voltage

±20V

Operating and Storage Temperature

Soldering Temperature*

300 C

O

O

-0.5A

VP1506NW

-0.5A

VP1509NW

-60V

8.0Ω

-90V

8.0Ω