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FE1B Datasheet(PDF) 1 Page - Diotec Semiconductor |
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FE1B Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page FE1A ... FE1G FE1A ... FE1G Superfast Switching Silicon-Rectifiers Superschnelle Silizium-Gleichrichter Version 2005-11-08 Dimensions - Maße [mm] Nominal current Nennstrom 1 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...400 V Plastic case Kunststoffgehäuse DO-15 (DO-204AC) Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF at/bei IF = 1 A FE1A 50 50 < 0.95 FE1B 100 100 < 0.95 FE1D 200 200 < 0.95 FE1F 300 300 < 0.95 FE1G 400 400 < 1.25 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 75°C IFAV 1 A 1) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 10 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 30/33 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t4.5 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+175°C -50...+175°C 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 1 http://www.diotec.com/ © Diotec Semiconductor AG Ø ±0.05 0.8 Ø ±0.05 3 |
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