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DB35-01 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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DB35-01 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page DB35-005 ... DB35-16 Maximum ratings Grenzwerte Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 120 A 1) Peak forward surge current 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle TA = 25°C IFSM 450 A Peak forward surge current 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle TA = 25°C IFSM 500 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 1000 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C Characteristics Kennwerte Max. current with cooling fin 300 cm² Dauergrenzstrom mit Kühlblech 300 cm2 TA = 50°C R-load C-load IFAV IFAV 35 A 35 A Forward voltage – Durchlass-Spannung Tj = 25°C IF = 17.5 A VF < 1.05 V 2) Leakage current – Sperrstrom Tj = 25°C VR = VRRM IR < 10 µA Isolation voltage terminals to case Isolationsspannung Anschlüsse zum Gehäuse VISO > 2500 V Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 1.8 K/W Admissible torque for mounting Zulässiges Anzugsdrehmoment 10-32 UNF M5 18 ± 10% lb.in. 2 ± 10% Nm 1 Valid, if the temperature of the case is kept to TC = 120°C – Gültig, wenn die Gehäusetemperatur auf TC = 120°C gehalten wird 2 Valid for one branch – Gültig für einen Brückenzweig 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current versus ambient temperature ) Zul. Richtstrom in Abh. von der Umgebungstemp. ) 1 1 I FAV [%] 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0.4 V F 0.8 1.0 1.2 1.4 [V] 1.8 10 10 10 1 10 3 2 -1 [A] I F T = 25°C j T = 125°C j 450a-(17a-1,05v) |
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