IRG4BC30UDPbF

4

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Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs.

Case Temperature

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

0

5

10

15

20

25

25

50

75

100

125

150

T , Case Temperature (°C)

C

V

= 15V

GE

A

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

t , Rectangular Pulse Duration (sec)

1

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE

(THERMAL RESPONSE)

P

t 2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

12

J

DM

thJC

C

1.5

2.0

2.5

3.0

-60 -40

-20

0

20

40

60

80

100 120 140 160

V

= 15V

80µs PULSE WIDTH

GE

A

T , Junction Temperature (°C)

J

I = 24A

I = 12A

I = 6.0A

C

C

C