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M12S64322A-6BG Datasheet(PDF) 8 Page - Elite Semiconductor Memory Technology Inc.

Part # M12S64322A-6BG
Description  512K x 32 Bit x 4 Banks Synchronous DRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

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ESMT
M12S64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
8/46
Version
Parameter
Symbol
-6
-7
Unit
Note
Col. address to col. address delay
tCCD(min)
1
CLK
3
CAS latency = 3
2
Number of valid
Output data
CAS latency = 2
1
ea
4
Note : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then
rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
AC CHARACTERISTICS
(AC operating condition unless otherwise noted)
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Unit
Note
CAS latency = 3
6
7
CLK cycle time
CAS latency = 2
tCC
10
1000
10
1000
ns
1
CAS latency = 3
5.5
6
CLK to valid
output delay
CAS latency = 2
tSAC
6
6
ns
1,2
CAS latency = 3
2
2
Output data
hold time
CAS latency = 2
tOH
2
2
ns
2
CLK high pulsh width
tCH
2.5
2.5
ns
3
CLK low pulsh width
tCL
2.5
2.5
ns
3
Input setup time
tSS
1.5
2
ns
3
Input hold time
tSH
1
1
ns
3
CLK to output in Low-Z
tSLZ
1
1
ns
2
CAS latency = 3
5.5
6
CLK to output
in Hi-Z
CAS latency = 2
tSHZ
6
6
ns
Note :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.
3. Assumed input rise and fall time (tr & tf) =1ns.
If tr & tf is longer than 1ns. transient time compensation should be considered.
i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.


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