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IRFU5305PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFU5305PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page IRFR5305PbF IRFU5305PbF HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A IDM Pulsed Drain Current -110 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/ °C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 280 mJ IAR Avalanche Current -16 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθJA Junction-to-Ambient (PCB mount)* ––– 50 °C/W RθJA Junction-to-Ambient** ––– 110 Thermal Resistance l Ultra Low On-Resistance l Surface Mount (IRFR5305) l Straight Lead (IRFU5305) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description 12/13/04 D-Pak I-Pak IRFR5305 IRFU5305 PD-95025A VDSS = -55V RDS(on) = 0.065Ω ID = -31A S D G www.irf.com 1 |
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