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F25L016A Datasheet(PDF) 1 Page - Elite Semiconductor Memory Technology Inc. |
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F25L016A Datasheet(HTML) 1 Page - Elite Semiconductor Memory Technology Inc. |
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1 / 31 page  ESMT F25L016A Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 1.2 1/31 16Mbit (2Mx8) 3V Only Serial Flash Memory FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz;100MHz Low power consumption - typical active current - 15 μ A typical standby current Reliability - 100,000 typical program/erase cycles - 20 years Data Retention Program - Byte program time 7 μ s(typical) Erase - Chip erase time 10s(typical) - Sector erase time 60ms(typical) block erase time 1sec (typical) Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over Word-Program operations SPI Serial Interface - SPI Compatible : Mode 0 and Mode3 End of program or erase detection Write Protect ( WP ) Hold Pin ( HOLD ) Package available - 8-pin SOIC 200-mil ORDERING INFORMATION Part No. Speed Package COMMENTS F25L016A –50PAG 50MHz 8 lead SOIC 200mil Pb-free F25L016A –100PAG 100MHz 8 lead SOIC 200mil Pb-free GENERAL DESCRIPTION The F25L016A is a 16Megablt, 3V only CMOS Serial Flash memory device organized as 2M bytes of 8 bits. This device is packaged in 8-lead SOIC 200mil. ESMT’s memory devices reliably store memory data even after 100,000 program and erase cycles. The F25L016A features a sector erase architecture. The device memory array is divided into 512 uniform sectors with 4K byte each ; 32 uniform blocks with 64K byte each. Sectors can be erased individually without affecting the data in other sectors. Blocks can be erased individually without affecting the data in other blocks. Whole chip erase capabilities provide the flexibility to revise the data in the device. The sector protect/unprotect feature disables both program and erase operations in any combination of the sectors of the memory. |
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