MG150J2YS50

2001-02-22 1/5

TOSHIBA GTR Module Silicon N Channel IGBT

MG150J2YS50

High Power Switching Applications

Motor Control Applications

l The electrodes are isolated from case

l High input impedance

l Includes a complete half bridge in one package

l Enhancement-mode

l High speed

Equivalent Circuit

Characteristic

Symbol

Rating

Unit

Collector-emitter voltage

600

V

Gate-emitter voltage

±20

V

DC

150

Collector current

1ms

300

A

DC

150

Forward current

1ms

300

A

Collector power dissipation (Tc = 25°C)

780

W

Junction temperature

150

°C

Storage temperature range

−40 ~ 125

°C

Isolation voltage

2500

(AC 1 min.)

V

Screw torque (Terminal / mounting)

―

3 / 3

N·m

JEDEC

―

EIAJ

―

TOSHIBA

2-95A1A

Unit: mm

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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

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000707EAA2