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IRGB4061DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGB4061DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRGB4061DPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 22Ω. This is only applied to TO-220AB package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100μA f CT6 ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —0.40 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) CT6 —1.65 1.95 IC = 18A, VGE = 15V, TJ = 25°C 5,6,7 VCE(on) Collector-to-Emitter Saturation Voltage — 2.05 — V IC = 18A, VGE = 15V, TJ = 150°C 9,10,11 —2.15 — IC = 18A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 500μA 9, 10, ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12 gfe Forward Transconductance — 12 — S VCE = 50V, IC = 18A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 2.0 25 μA VGE = 0V, VCE = 600V — 550 — VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 2.30 3.30 V IF = 18A 8 —1.6 — IF = 18A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 35 55 IC = 18A 24 Qge Gate-to-Emitter Charge (turn-on) — 10 15 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 15 25 VCC = 400V Eon Turn-On Switching Loss — 95 140 IC = 18A, VCC = 400V, VGE = 15V CT4 Eoff Turn-Off Switching Loss — 350 405 μJ RG = 22Ω, L = 200μH, LS = 150nH Etotal Total Switching Loss — 445 545 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 40 55 IC = 18A, VCC = 400V, VGE = 15V CT4 tr Rise time — 25 35 ns RG = 22Ω, L = 200μH, LS = 150nH td(off) Turn-Off delay time — 105 120 tf Fall time — 25 35 Eon Turn-On Switching Loss — 285 — IC = 18A, VCC = 400V, VGE=15V 13, 15 Eoff Turn-Off Switching Loss — 570 — μJ RG=22Ω, L=200μH, LS=150nH, TJ = 175°C fà CT4 Etotal Total Switching Loss — 855 — Energy losses include tail & diode reverse recovery WF1, WF2 td(on) Turn-On delay time — 40 — IC = 18A, VCC = 400V, VGE = 15V 14, 16 tr Rise time — 25 — ns RG = 22Ω, L = 200μH, LS = 150nH CT4 td(off) Turn-Off delay time — 120 — TJ = 175°C WF1 tf Fall time — 40 — WF2 Cies Input Capacitance — 1043 — pF VGE = 0V 23 Coes Output Capacitance — 87 — VCC = 30V Cres Reverse Transfer Capacitance — 32 — f = 1.0Mhz TJ = 175°C, IC = 72A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 22 Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μs VCC = 400V, Vp =600V 22, CT3 Rg = 22 Ω, VGE = +15V to 0V WF4 Erec Reverse Recovery Energy of the Diode — 260 — μJ TJ = 175°C 17, 18, 19 trr Diode Reverse Recovery Time — 100 — ns VCC = 400V, IF = 18A 20, 21 Irr Peak Reverse Recovery Current — 23 — A VGE = 15V, Rg = 22Ω, L =200μH, Ls = 150nH WF3 Conditions |
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