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BR100-04 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BR100-04 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BR100-03 ... BR100-04 BR100-03 ... BR100-04 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Dimensions - Maße [mm] Breakover voltage Durchbruchspannung 28 ... 45 V Peak pulse current Max. Triggerimpuls ± 2 A Plastic case Kunststoffgehäuse DO-41 DO-204AL Weight approx. – Gewicht ca. 0.4 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Power dissipation Verlustleistung TA = 50°C Ptot 150 mW 1) Peak pulse current (120 Hz pulse repetition rate) Max. Triggerstrom (120 Hz Puls-Wiederholrate) tp ≤ 20 µs IPM ± 2 A 1) Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+100°C -50...+175°C Characteristics Kennwerte Breakover voltage Durchbruchspannung dV/dt = 10 V/µs BR100-03 BR100-031 BR100-04 VBO VBO VBO 28 ... 36 V 30 ... 34 V 35 ... 45 V Breakover current – Durchbruchstrom V = 98% VBO IBO < 50 µA Asymmetry of breakover voltage Unsymmetrie der Durchbruchspannung |V(BO)F – V(BO)R| ΔVBO < 3.8 V Foldback voltage – Spannungs-Rücksprung ΔI = IBO to/auf IF = 10 mA dV/dt = 10 V/µs ΔVF/R > 5 V Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 45 K/W 1) Thermal resistance junction to leads Wärmewiderstand Sperrschicht − Anschlussdraht RthL < 15 K/W 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø ±0.05 0.8 Ø 0.1 2.6 - |
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