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Rev. 4408A–AERO–02/05

Features

– 15 ns for 3.3V biased only (AT60142F)

– 17 ns for 5V Tolerant (AT60142FT)

– Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns

– Standby: 3.5 mW (Typ)

°C

Description

The AT60142F/FT are very low power CMOS static RAM organized as 524 288 x 8

bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the AT60142F/FT combine an

extremely low standby supply current (Typical value = 1 mA) with a fast access time at

15 ns over the full military temperature range. The high stability of the 6T cell provides

excellent protection against soft errors due to noise.

The F version is biased at 3.3 V and is not 5V tolerant: it is available to 15 ns

specification.

The FT version is a variant allowing for 5V tolerance: it is available in 17 ns

specification.

The AT60142F/FT are processed according to the methods of the latest revision of the

MIL PRF 38535 or ESCC 9000.

It is produced on a radiation hardened 0.25 µm CMOS process.

Rad Hard

512K x 8

Very Low Power

CMOS SRAM

AT60142F

AT60142FT