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ADS8505IBDBRG4 Datasheet(PDF) 3 Page - Texas Instruments |
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ADS8505IBDBRG4 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 25 page www.ti.com ADS8505 SLAS180B – SEPTEMBER 2005 – REVISED JUNE 2007 ELECTRICAL CHARACTERISTICS (continued) T A = –40°C to 85°C, fs = 250 kHz, VDIG = VANA = 5 V, using internal reference (unless otherwise noted) ADS8505I ADS8505IB PARAMETER TEST CONDITIONS UNIT MIN TYP MAX MIN TYP MAX DC ACCURACY INL Integral linearity error –4 4 –1.5 1.5 LSB(1) DNL Differentiall linearity error –2 2 –1 1 LSB(1) No missing codes 15 16 Bits Transition noise(2) 0.77 0.77 LSB Full-scale error(3)(4) Int. ref. –0.5 0.5 –0.25 0.25 %FSR Full-scale error drift Int. ref. ±7 ±7 ppm/ °C Full-scale error(3)(4) Ext. 2.5-V ref. –0.25 0.25 –0.1 ±0.01 0.1 %FSR Full-scale error drift Ext. 2.5-V ref. ±2 ±2 ppm/ °C Bipolar zero error(3) –5 5 –2 2 mV Bipolar zero error drift ±0.4 ±0.4 ppm/ °C Power supply sensitivity –8 8 –8 8 +4.75 V < VD < +5.25 V LSB (VDIG = VANA = VD) AC ACCURACY SFDR Spurious free dynamic range fI = 20 kHz 92 98 96 105 dB(5) THD Total harmonic distortion fI = 20 kHz –98 –92 –103 –96 dB fI = 20 kHz 83 88 86 88 dB SINAD Signal-to-(noise + distortion) –60-dB Input 30 32 dB SNR Signal-to-noise ratio fI = 20 kHz 83 88 86 88 dB Full-power bandwidth(6) 500 500 kHz SAMPLING DYNAMICS Aperture delay 5 5 ns Transient response FS Step 2 2 µs Overvoltage recovery(7) 150 150 ns REFERENCE Internal reference voltage 2.48 2.5 2.52 2.48 2.5 2.52 V Internal reference source current (must 1 1 µA use external buffer) Internal reference drift 8 8 ppm/ °C External reference voltage range for 2.3 2.5 2.7 2.3 2.5 2.7 V specified linearity External reference current drain Ext. 2.5-V ref. 100 100 µA DIGITAL INPUTS Logic levels VIL Low-level input voltage –0.3 0.8 –0.3 0.8 V VIH High-level input voltage 2.0 VDIG +0.3 V 2.0 VDIG +0.3 V V IIL Low-level input current ±10 ±10 µA IIH High-level input current ±10 ±10 µA DIGITAL OUTPUTS Data format (parallel 16-bits) Data coding (binary 2's complement) VOL Low-level output voltage ISINK = 1.6 mA 0.4 0.4 V VOH High-level output voltage ISOURCE = 500 mA 4 4 V Hi-Z state, Leakage current ±5 ±5 µA VOUT = 0 V to VDIG Output capacitance Hi-Z state 15 15 pF (1) LSB means least significant bit. For the 16-bit, ±10-V input ADS8505, one LSB is 305 µV. (2) Typical rms noise at worst case transitions and temperatures. (3) As measured with fixed resistors shown in Figure 27. Adjustable to zero with external potentiometer. (4) Full-scale error is the worst case of –full-scale or +full-scale deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes the effect of offset error. (5) All specifications in dB are referred to a full-scale ±10-V input. (6) Full-power bandwidth is defined as the full-scale input frequency at which signal-to-(noise + distortion) degrades to 60 dB, or 10 bits of accuracy. (7) Recovers to specified performance after 2 x FS input overvoltage. 3 Submit Documentation Feedback |
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