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TIL925A Datasheet(PDF) 2 Page - Texas Instruments |
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TIL925A Datasheet(HTML) 2 Page - Texas Instruments |
2 / 8 page TIL923, TIL924, TIL925 TIL923A, TIL924A, TIL925A SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS031 – OCTOBER 1991 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 schematic diagrams K A 2E 2C 1E 1C E C 3 4 TIL925 TIL924 TIL923 4E 4C 3E 3C 5 6 7 8 1 2 4A 4K 3K 3A 8 7 6 5 9 10 11 12 13 14 15 16 1E 1C 2C 2E 1 2 3 4 1A 1K 2K 2A 2A 2K 1K 1A 4 3 2 1 absolute maximum ratings at 25 °C free-air temperature (unless otherwise noted) Input-to-output voltage (see Note 1) ±7.5 kV peak or dc (±5.3 kV rms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector-emitter voltage (see Note 2) 35 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter-collector voltage 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input diode reverse voltage 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input diode continuous forward current at (or below) 25 °C free-air temperature (see Note 3) 50 mA . . . . . . . Continuous power dissipation at (or below) 25 °C free-air temperature: Phototransistor (see Note 4) 150 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input diode plus phototransistor per channel (see Note 5) 200 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature, TA – 55 °C to 100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range – 55 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NOTES: 1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL requirements. 2. This value applies when the base-emitter diode is open circuited. 3. Derate linearly to 100 °C free-air temperature at the rate of 0.67 mA/°C. 4. Derate linearly to 100 °C free-air temperature at the rate of 2 mW/°C. 5. Derate linearly to 100 °C free-air temperature at the rate of 2.67 mW/°C. electrical characteristics, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 0.5 mA, IF = 0 35 V V(BR)ECO Emitter-collector breakdown voltage IC = 100 µA, IF = 0 7 V IR Input diode static reverse current VR = 5 V 10 µA IC(off) Off-state collector current VCE = 10 V, IF = 0 100 nA CTR Current TIL923, TIL924, TIL925 IF =2mA VCE =1V 500% CTR transfer ratio TIL923A, TIL924A, TIL925A IF = 2 mA, VCE = 1 V 1000% VF Input diode static forward voltage IF = 20 mA 1.4 V VCE(sat) Collector-emitter saturation voltage IF = 10 mA, IC = 50 mA 1 V Cio Input-to-output capacitance Vin-out = 0, f = 1 MHz, See Note 6 1 pF rio Input-to-output internal resistance Vin-out = ±1 kV, See Note 6 1011 Ω NOTE 6. These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together. |
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