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10BQ060 Datasheet(PDF) 2 Page - International Rectifier |
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10BQ060 Datasheet(HTML) 2 Page - International Rectifier |
2 / 6 page 10BQ060PbF Bulletin PD-20785 07/04 2 www.irf.com Part number 10BQ060PbF V R Max. DC Reverse Voltage (V) V RWM Max. Working Peak Reverse Voltage (V) 60 Voltage Ratings V FM Max. Forward Voltage Drop (1) 0.6 V @ 1A * See Fig. 1 0.76 V @ 2A 0.57 V @ 1A 0.69 V @ 2A I RM Max. Reverse Leakage Current (1) 0.1 mA T J = 25 °C * See Fig. 2 5.0 mA T J = 125 °C C T Typical Junction Capacitance 62 pF V R = 5VDC (test signal range 100kHz to 1MHz) 25°C L S Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body dv/dt Max. Volatge Rate of Charge 10000 V/ µs (Rated VR) T J = 25 °C T J = 125 °C V R = rated VR Electrical Specifications Parameters 10BQ Units Conditions (1) Pulse Width < 300µs, Duty Cycle < 2% I F(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ T L = 103 °C, rectangular wave form I FSM Max. Peak One Cycle Non-Repetitive 700 A 5µs Sine or 3µs Rect. pulse Surge Current 42 10ms Sine or 6ms Rect. pulse E AS Non- Repetitive Avalanche Energy 2.0 mJ T J = 25 °C, IAS = 1A, L = 4mH I AR Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec Frequency limited by T J max. Va = 1.5 x Vr typical Parameters 10BQ Units Conditions Absolute Maximum Ratings Following any rated load condition and with rated V RRM applied TJ Max.Junction Temperature Range (*) - 55 to 150 °C T stg Max. Storage Temperature Range - 55 to 150 °C R thJL Max. Thermal Resistance Junction 36 °C/W DC operation to Lead (**) R thJA Max. Thermal Resistance Junction 80 °C/W to Ambient wt Approximate Weight 0.10(0.003) g (oz.) Case Style SMB Similar DO-214AA Device Marking IR1H Thermal-Mechanical Specifications Parameters 10BQ Units Conditions < thermal runaway condition for a diode on its own heatsink (**) Mounted 1 inch square PCB (*) dPtot 1 dTj Rth( j-a) |
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