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STW12NK95Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW12NK95Z
Description  N-channel 950V - 0.69廓 - 10A - TO-247 Zener - Protected SuperMESH??PowerMOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW12NK95Z Datasheet(HTML) 3 Page - STMicroelectronics

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STW12NK95Z
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
950
V
VDGR
Drain-gate voltage (RGS = 20KΩ)950
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
10
A
ID
Drain current (continuous) at TC=100°C
6.3
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
40
A
PTOT
Total dissipation at TC = 25°C
230
W
Derating Factor
1.85
W/°C
VESD (G-S)
Gate source ESD (HBM-C=100pF, R=1,5K
Ω)
6000
V
dv/dt(2)
2.
ISD ≤10A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
4.5
V/ns
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case Max
0.54
°C/W
Rthj-a
Thermal resistance junction-ambient Max
50
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
10
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
500
mJ


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