IRFR310PBF datasheet(7/10 Pages) IRF

Part #	IRFR310PBF

Description	HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=3.6廓 , ID=1.7A )

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IRFR/U310PbF

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7

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

+

-

+

-

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Peak Diode Recovery dv/dt Test Circuit

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14 For N Channel HEXFETS

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IRFR310PBF Datasheet(PDF) 7 Page - International Rectifier

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