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IRFSL4310PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFSL4310PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 12 page IRF/B/S/SL4310PbF 2 www.irf.com Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.35mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. I SD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%. S D G Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 5.6 7.0 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 RG Gate Input Resistance ––– 1.4 ––– Ω f = 1MHz, open drain Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 160 ––– ––– S Qg Total Gate Charge ––– 170 250 nC Qgs Gate-to-Source Charge ––– 46 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 62 ––– td(on) Turn-On Delay Time ––– 26 ––– ns tr Rise Time ––– 110 ––– td(off) Turn-Off Delay Time ––– 68 ––– tf Fall Time ––– 78 ––– C iss Input Capacitance ––– 7670 ––– pF C oss Output Capacitance ––– 540 ––– C rss Reverse Transfer Capacitance ––– 280 ––– C oss eff. (ER) Effective Output Capacitance (Energy Related) i ––– 650 ––– C oss eff. (TR) Effective Output Capacitance (Time Related) h ––– 720.1 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 130 A (Body Diode) ISM Pulsed Source Current ––– ––– 550 (Body Diode) Ãdi VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 45 68 ns TJ = 25°C VR = 85V, ––– 55 83 TJ = 125°C IF = 75A Qrr Reverse Recovery Charge ––– 82 120 nC TJ = 25°C di/dt = 100A/µs g ––– 120 180 TJ = 125°C IRRM Reverse Recovery Current ––– 3.3 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions V DS = 50V, ID = 75A I D = 75A V GS = 20V V GS = -20V MOSFET symbol showing the V DS = 80V Conditions V GS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V j, See Fig.11 VGS = 0V, VDS = 0V to 80V h, See Fig. 5 T J = 25°C, IS = 75A, VGS = 0V g integral reverse p-n junction diode. Conditions V GS = 0V, ID = 250µA Reference to 25°C, I D = 1mAd V GS = 10V, ID = 75A g V DS = VGS, ID = 250µA V DS = 100V, VGS = 0V V DS = 100V, VGS = 0V, TJ = 125°C I D = 75A R G = 2.6Ω V GS = 10V g V DD = 65V |
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