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LX803 Datasheet(PDF) 1 Page - Polyfet RF Devices |
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LX803 Datasheet(HTML) 1 Page - Polyfet RF Devices |
1 / 2 page RF CHARACTERISTICS ( WATTS OUTPUT ) 45 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 45 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR, ABSOLUTE MAXIMUM RATINGS (TC = 25 C) o Total Device Junction to Case Thermal Maximum Junction Storage Temperature DC Drain Current Drain to Gate Drain to Source Gate to Source 120 Watts 1.25 C o 200 -65 to 150 6 A V V V 70 70 ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Gps η VSWR Common Source Power Gain Drain Efficiency Load Mismatch Tolerance dB % Relative 11 55 1.2 20:1 Idq = Idq = Idq = 1.2 1.2 A, A, A, 28.0 Vds = V, 28.0 Vds = V, 28.0 Vds = V, F = 1000 MHz F = 1000 MHz F = 1000 MHz Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 65 3 1 7 1 2.4 0.35 16.5 90 3 45 Mho Ohm Amp pF V V pF pF mA uA 0.2 Ids = A, Vgs = 0V 28.0 Vds = V, Vgs = 0V Vds = 0 V, Vgs = 30V 0.3 Ids = A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 7.5 Vgs = 20V, Vds = 10V 28.0 Vds = V, Vgs = 0V, F = 1 MHz A 28.0 Vds = V, Vgs = 0V, F = 1 MHz 28.0 Vds = V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com REVISION SILICON GATE ENHANCEMENT MODE RF POWER HIGH GAIN, LOW NOISE "Polyfet" process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency. t TM C o C o C/W o LX803 polyfet rf devices Dissipation Resistance Temperature Voltage Voltage Voltage 8/31/99 LDMOS TRANSISTOR 20 |
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