RF CHARACTERISTICS (

WATTS OUTPUT )

45

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

45 Watts Single Ended

Package Style LX2

HIGH EFFICIENCY, LINEAR,

ABSOLUTE MAXIMUM RATINGS (TC = 25 C)

o

Total

Device

Junction to

Case Thermal

Maximum

Junction

Storage

Temperature

DC Drain

Current

Drain to

Gate

Drain to

Source

Gate to

Source

120 Watts

1.25

C

o

200

-65

to 150

6 A

V

V

V

70

70

ELECTRICAL CHARACTERISTICS (EACH SIDE)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Gps

η

VSWR

Common Source Power Gain

Drain Efficiency

Load Mismatch Tolerance

dB

%

Relative

11

55

1.2

20:1

Idq =

Idq =

Idq =

1.2

1.2

A,

A,

A,

28.0

Vds =

V,

28.0

Vds =

V,

28.0

Vds =

V,

F = 1000 MHz

F = 1000 MHz

F = 1000 MHz

Bvdss

Idss

Igss

Vgs

gM

Rdson

Idsat

Ciss

Crss

Coss

Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current

Gate Bias for Drain Current

Forward Transconductance

Saturation Resistance

Saturation Current

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

65

3

1

7

1

2.4

0.35

16.5

90

3

45

Mho

Ohm

Amp

pF

V

V

pF

pF

mA

uA

0.2

Ids =

A,

Vgs = 0V

28.0

Vds =

V,

Vgs = 0V

Vds = 0 V,

Vgs = 30V

0.3

Ids =

A,

Vgs = Vds

Vds = 10V, Vgs = 5V

Vgs = 20V, Ids = 7.5

Vgs = 20V, Vds = 10V

28.0

Vds =

V, Vgs = 0V, F = 1 MHz

A

28.0

Vds =

V, Vgs = 0V, F = 1 MHz

28.0

Vds =

V, Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

REVISION

SILICON GATE ENHANCEMENT MODE

RF POWER

HIGH GAIN, LOW NOISE

"Polyfet"

process features low

feedback and output capacitances

resulting in high F transistors with

high input impedance and high

efficiency.

t

TM

C

o

C

o

C/W

o

LX803

polyfet rf devices

Dissipation

Resistance

Temperature

Voltage

Voltage

Voltage

8/31/99

LDMOS TRANSISTOR

20