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AMMC-5040-W10 Datasheet(PDF) 1 Page - AVAGO TECHNOLOGIES LIMITED |
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AMMC-5040-W10 Datasheet(HTML) 1 Page - AVAGO TECHNOLOGIES LIMITED |
1 / 10 page AMMC-5040 20–45 GHz GaAs Amplifier Data Sheet Description The AMMC-5040 is a high gain broadband amplifier designed for both military applications and commercial communication systems. This four-stage amplifier has input and output matching circuitry for use in 50 ohm environments. It is fabricated using PHEMT integrated circuit structures that provide exceptional broadband performance. The backside of this chip is both RF and DC ground. This simplifies the assembly process and reduces assembly related performance variations and costs. For improved reliability and moisture protection, the die is passivated at the active areas.This MMIC is a cost effective alternative to hybrid (discrete-FET) amplifiers that require complex tuning and assembly process. Features • Frequency range: 20– 45 GHz • High gain: 25 dB • Gain flatness: ±1.5 dB • Return loss: Input: 17 dB, Output: 11 dB • Output power: P -1dB = 21 dBm at 38 GHz P -3dB = 22.5 dBm at 38 GHz Applications • Broadband gain block • Broadband driver amplifier • Point-to-point radio • LMDS • EW • Instrumentation • Frequency Multiplier (X2 and X3) Absolute Maximum Ratings[1] Symbol Parameters/Conditions Units Min. Max. V D1,2-3-4 Drain Voltage V 5 V G1,2-3-4 Gate Voltage V -3.0 0.5 I DD Total Drain Current mA 550 P in CW Input Power dBm 21 T ch Operating Channel Temperature °C +160 T b Operating Backside Temperature °C -55 +75 T stg Storage Temperature °C -65 +165 T max Max. Assembly Temp (60 sec max) °C +300 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Chip Size: 1720 x 760 µm (67.7 x 29.9 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 75 x 75 µm (3 ±0.4 mils) |
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