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AMMC-6345-W50 Datasheet(PDF) 8 Page - AVAGO TECHNOLOGIES LIMITED |
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AMMC-6345-W50 Datasheet(HTML) 8 Page - AVAGO TECHNOLOGIES LIMITED |
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8 / 10 page  8 Biasing and Operation AMMC-6345 has quite flexible drain biasing conditions. Recommended quiescent DC bias condition for optimum power and linearity performances is Vd=5 volts with Vg set for Id=480 mA. For high gain applications, the AMMC-6345 can be biased at Vd=3V. Minor improve- ments in performance are possible depending on the application. The drain bias voltage range is 3 to 5.5V. A single DC gate supply connected to Vg will bias all gain stages. Muting can be accomplished by setting Vg to the pinch-off voltage Vp. An optional output power detector network is also provided. The differential voltage between the Det-Ref and Det-Out pads can be correlated with the RF power emerging from the RF output port. The detected voltage is given by : ( ) ofs ref V V V V − − = det where ref V is the voltage at the R DET _ port, det V is a volt- age at the O DET _ port, and ofs V is the zero-input-power offset voltage. There are three methods to calculate : 1. ofs V can be measured before each detector measure- ment (by removing or switching off the power source and measuring ). This method gives an error due to temperature drift of less than 0.01dB/50°C. 2. ofs V canbemeasuredatasinglereferencetemperature. The drift error will be less than 0.25dB. 3. ofs V can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate at any temperature. This method gives an error close to the method #1. The RF ports are AC coupled at the RF input to the first stage and the RF output of the final stage. No ground wired are needed since ground connections are made with plated through-holes to the backside of the de- vice. Assembly Techniques The backside of the MMIC chip is RF ground. For mi- crostrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy[1]. For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plate metal shim (same length and width as the MMIC) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. The amount of epoxy used for the chip and/or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. The ground plain should be free of any residue that may jeopardize electrical or mechanical attachment. The location of the RF bond pads is shown in Figure 12. Note that all the RF input and output ports are in a Ground-Signal configuration. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is normally suf- ficient for signal connections, however double bonding with 0.7 mil gold wire or use of gold mesh[2] is recom- mended for best performance, especially near the high end of the frequency band. Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Buckbee-Mears Corporation, St. Paul, MN, 800-262-3824 |
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