MT48H16M16LFBF-8G datasheet(5/71 Pages) MICRON

Part #	MT48H16M16LFBF-8G

Description	256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

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Manufacturer	MICRON [Micron Technology]

Direct Link	http://www.micron.com

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Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT48H16M16LF_2.fm - Rev F 4/07 EN

5

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description

Figure 1:

256Mb Mobile SDRAM Part Numbering

General Description

The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access

memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM

with a synchronous interface (all signals are registered on the positive edge of the clock

signal, CLK). Each of the x16’s 67,108,864-bit banks is organized as 8,192 rows by 512

columns by 16 bits. Each of the x32’s 67,108,864-bit banks is organized as 4,096 rows by

512 columns by 32 bits.

Read and write accesses to the SDRAM are burst oriented; accesses start at a selected

location and continue for a programmed number of locations in a programmed

sequence. Accesses begin with the registration of an ACTIVE command, which is then

followed by a READ or WRITE command. The address bits registered coincident with the

ACTIVE command are used to select the bank and row to be accessed. The address bits

registered coincident with the READ or WRITE command are used to select the starting

column location for the burst access.

The SDRAM provides for programmable read or write burst lengths (BLs) of 1, 2, 4, or 8

page locations with a read burst terminate option. An auto precharge function may be

enabled to provide a self-timed row precharge that is initiated at the end of the burst

sequence.

The 256Mb SDRAM uses an internal pipelined architecture to achieve high-speed opera-

tion. It also allows the column address to be changed on every clock cycle to achieve a

high-speed, fully random access. Precharging one bank while accessing one of the other

three banks will hide the precharge cycles and provide seamless high-speed, random-

access operation.

Speed Grade

tCK = 7.5ns

tCK = 8.0ns

-75

-8

IT

Operating Temp.

Commercial

Industrial

L

Power

Standard IDD2P/IDD7

Low IDD2P/IDD7

Example Part Number: MT48H8M32LFB5-75LIT

Mobile

Configuration

MT48

Package

Speed

Temp.

Power

Configuration

16 Meg x 16

8 Meg x 32

16M16LF

8M32LF

Package

8 x 9 VFBGA (lead-free)

8 x 13 VFBGA (lead-free)

H

VDD/

VDDQ

VDD/VDDQ

1.8V/1.8V

BF

B5

Revision

–

Revision

:G Design Revision

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MT48H16M16LFBF-8G Datasheet(PDF) 5 Page - Micron Technology

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