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THN6501S Datasheet(PDF) 1 Page - AUK corp

Part # THN6501S
Description  SiGe NPN Transistor
Download  15 Pages
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Manufacturer  AUK [AUK corp]
Direct Link  https:www.auk.co.kr
Logo AUK - AUK corp

THN6501S Datasheet(HTML) 1 Page - AUK corp

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THN6501 Series
SiGe NPN Transistor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure
NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Power Gain
MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Transition Frequency
fT = 9 GHz at VCE = 3 V, IC = 30 mA
Pin Configuration
Pin No
1
2
3
□ h
FE Classification
Product
THN6501S
THN6501U
THN6501Z
THN6501E
□ Absolute Maximum Ratings
Caution : Electro Static Senetive Device
□ Available Package
Description
Base
Symbol
B
Unit : mm
SOT-523
1.6ⅹ0.8, 0.8t
Emitter
C
Collector
Ic
Symbol
Ratings
Unit
mA
mW
150
V
V
V
20
12
2.5
VCEO
VEBO
AB2
hFE
125 to 300 80 to 160
Marking
AB1
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
SOT-343
SOT-323
E
-65 ~ 150
2.0ⅹ1.25, 1.0t
Package
Dimension
SOT-23
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
150
Operating Junction Temperature
PT
TSTG
TJ
Storage Temperature
℃
℃
VCBO
100
Collector Current (DC)
Total Power Dissipation
SOT-523
Unit in mm
Semiconductor
1


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