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THN6501S Datasheet(PDF) 1 Page - AUK corp |
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THN6501S Datasheet(HTML) 1 Page - AUK corp |
1 / 15 page THN6501 Series SiGe NPN Transistor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA Pin Configuration Pin No 1 2 3 □ h FE Classification Product THN6501S THN6501U THN6501Z THN6501E □ Absolute Maximum Ratings Caution : Electro Static Senetive Device □ Available Package Description Base Symbol B Unit : mm SOT-523 1.6ⅹ0.8, 0.8t Emitter C Collector Ic Symbol Ratings Unit mA mW 150 V V V 20 12 2.5 VCEO VEBO AB2 hFE 125 to 300 80 to 160 Marking AB1 Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage SOT-343 SOT-323 E -65 ~ 150 2.0ⅹ1.25, 1.0t Package Dimension SOT-23 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 150 Operating Junction Temperature PT TSTG TJ Storage Temperature ℃ ℃ VCBO 100 Collector Current (DC) Total Power Dissipation SOT-523 Unit in mm Semiconductor 1 |
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