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SRAS8100 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SRAS8100 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  Dimensions in inches and (millimeters) - 52 - Version:B07 SRAS820 - SRAS8150 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers D2PAK Features For surface mounted application Ideal for automated pick & place Low power loss, high efficiency High current capability, low VF High reliability Epitaxial construction Guard-ring for transient protection Mechanical Data Cases: D 2PAK molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free. solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds/.25”,(6.35mm) from case Weight: 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SRAS 820 SRAS 830 SRAS 840 SRAS 850 SRAS 860 SRAS 890 SRAS 8100 SRAS 8150 Units Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 150 V Maximum RMS Voltage VRMS 14 21 28 35 42 63 70 105 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 90 100 150 V Maximum Average Forward Rectified Current See Fig. 1 I(AV) 8.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A M aximum Instantaneous Forward Voltage @8.0A VF 0.55 0.70 0.95 V 0.1 Maximum D.C. Reverse Current @Tc=25 oC at Rated DC Blocking Voltage @ Tc=125 oC IR 5.0 mA mA Typical Junction Capacitance (Note 2) Cj 165 pF Typical Thermal Resistance (Note 1) RθJC 3.0 o C/W Operating Junction Temperature Range TJ -65 to +150 o C Storage Temperature Range TSTG -65 to +150 o C Notes: 1. Thermal Resistance from Junction to Case Per Leg 2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C. |
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