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TISP1072F3 Datasheet(PDF) 2 Page - Power Innovations Ltd |
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TISP1072F3 Datasheet(HTML) 2 Page - Power Innovations Ltd |
2 / 17 page TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS 2 SEPTEMBER 1993 - REVISED SEPTEMBER 1997 PRODUCT INFORMATION description (continued) These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation The small-outline 8-pin assignment has been carefully chosen for these devices to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings. absolute maximum ratings NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section. 2. Initially the TISP must be in thermal equilibrium with 0°C < TJ <70°C. The surge may be repeated after the TISP returns to its initial conditions. 3. Above 70°C, derate linearly to zero at 150°C lead temperature. NOTE 4: Further details on capacitance are given in the Applications Information section. RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage ( 0°C < TJ <70°C) ‘1072F3 ‘1082F3 VDRM -58 -66 V Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) ITSP A 1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 120 2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs) 80 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 70 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35 Non-repetitive peak on-state current (see Notes 2 and 3) D Package ITSM 4 A rms 50 Hz, 1 s P Package 6 SL Package 6 Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/µs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -40 to +150 °C electrical characteristics for the T and R terminals, 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS TISP1072F3 TISP1082F3 UNIT MIN TYP MAX MIN TYP MAX IDRM Repetitive peak off- state current VD = ±VDRM, 0°C < TJ <70°C ±10 ±10 µA ID Off-state current VD = ±50 V ±10 ±10 µA Coff Off-state capacitance f = 100 kHz, Vd = 100 mV VD = 0 (see Note 4) D Package 0.08 0.5 0.08 0.5 pF P Package 0.06 0.4 0.06 0.4 pF SL Package 0.02 0.3 0.02 0.3 pF |
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