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MUR860 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MUR860 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page Dimensions in inches and (millimeters) Version: A06 MUR820 - MUR860 8.0 AMPS. Glass Passivated Super Fast Rectifiers TO-220AC .412(10.5) MAX .185(4.70) .175(4.44) .055(1.40) .045(1.14) .27(6.86) .23(5.84) .11(2.79) .10(2.54) .025(0.64) .014(0.35) .154(3.91) .148(3.74) DIA PIN1 2 .113(2.87) .103(2.62) .16(4.06) .14(3.56) .037(0.94) .027(0.68) .205(5.20) .195(4.95) .594(15.1) .587(14.9) .56(14.22) .53(13.46) PIN 1 PIN 2 CASE Features High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. Mechanical Data Cases: TO-220AC molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds/.25”,(6.35mm) from case. Weight: 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MUR820 MUR840 MUR860 Units Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified Current .375”(9.5mm) Lead Length (See Fig. 1) I(AV) 8.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 100 A Maximum Instantaneous Forward Voltage @ 8.0A VF 0.975 1.30 1.7 V Maximum DC Reverse Current @ TC=25 oC at Rated DC Blocking Voltage @ TC=125 oC (Note 4) IR 5.0 250 uA uA Maximum Reverse Recovery Time ( Note 2 ) Trr 25 50 nS Maximum Forward Recovery Time TFR (IF=1.0A, di/dt = 50A/uS), Tfr 35 50 nS Typical Thermal Resistance (Note 3) RθJC 3.0 2.0 oC/W Operating Temperature Range TJ -65 to +175 oC Storage Temperature Range T STG -65 to +175 oC Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, Mounted on Heatsink Size of 2” x 3” x 0.25” Al-Plate. 4. Pulse lest: tp = 300 uS, Duty Cycle < 2%. |
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