SKM120B020 datasheet(1/4 Pages) SEMIKRON

Part #	SKM120B020

Description	SEMITRANS짰 M Power MOSFET Modules 120 A, 200 V, 17 m廓

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Manufacturer	SEMIKRON [Semikron International]

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B 5 – 39

SEMITRANS® M

Power MOSFET Modules

120 A, 200 V, 17 m

Ω

SKM 120 B 020

Replaces discontinued SKM 224 A

Features

• N Channel, enhancement mode

• Short internal connections

avoid oscillations

• Switching kWs in less than 1 µs

• Isolated copper baseplate using

Al2O3 ceramic Direct Copper

Bonding Technology (DCB)

• All electrical connections on top

for easy busbaring

• Large clearances and creepage

distances

• Material, clearances and cree-

page distances meet UL-specifi-

cations

Typical Applications

• Switched mode power supplies

• DC servo and robot drives

• DC choppers

• UPS equipment

• Plasma cutting

• Not suitable for linear

amplification

This is an electrostatic dischar-

ge sensitive device (ESDS).

Please observe the international

standard IEC 747-1, Chapter IX.

Absolute Maximum Ratings

Symbol

Conditions

1)

Values

Units

VDS

200

V

VDGR

RGS = 20 k

Ω

200

V

ID

Tcase = 25

°C

120

A

Tcase = 85

°C

87

A

IDM

360

A

VGS

± 20

V

PD

500

W

Tj, Tstg

– 55 . . .+150

°C

Visol

AC, 1 min

2 500

V

humidity

DIN 40 040

Class F

climate

DIN IEC 68 T.1

55/150/56

Inverse Diode

IF= – ID

120

A

IFM= – IDM

360

A

Characteristics

Symbol

Conditions

1)

min.

typ.

max.

Units

V(BR)DSS

VGS = 0, ID = 0,25 mA

200

–

V

VGS(th)

VGS = VDS, ID = 1 mA

2,1

3,0

4,0

V

IDSS

VGS = 0

Tj = 25

°C

–

50

250

µA

VGS = 200 V

Tj = 125

°C

–

300

1000

µA

IGSS

VGS = 20 V, VDS = 0

–

10

100

nA

RDS(on)

VGS = 10 V, ID = 120 A

–

15

17

m

Ω

gfs

VDS = 5 V, ID = 75 A

60

90

–

S

CCHC

per MOSFET

–

100

pF

Ciss

VGS = 0

–

10,4

16

nF

Coss

VDS = 25 V

–

2

4,5

nF

Crss

f = 1 MHz

–

1

1,4

nF

LDS

–

30

nH

td(on)

VDD = 100 V

–

120

–

ns

tr

ID = 75 A

–

60

–

ns

td(off)

VGS = 10 V

–

240

–

ns

tf

RGS = 3,3

Ω

–40

–

ns

Inverse Diode

VSD

IF = 240 A, VGS = 0

–

1,2

1,5

V

trr

Tj = 25

°C 2)

–

400

–

ns

Tj = 150

°C 2)

–

700

–

ns

Qrr

Tj = 25

°C 2)

–5,0

–

µC

Tj = 150

°C 2)

–8

–

Thermal Characteristics

Rthjc

per MOSFET

–

0,25

°C/W

Rthch

per module

–

0,05

°C/W



























Mechanical Data

M1

to heatsink

SI Units (M6)

4

–

5

Nm

US Units

35

–

44

lb.in.

M2

for terminals SI Units (M5)

2,5

–

3,5

Nm

US Units

22

–

24

lb.in.

a

–

5x9,81

m/s

2

w

–

250

g

Case

→ page B 5 – 42

D 70

1) Tcase = 25 °C, unless otherwise specified.

2) IF = – ID, VR = 100 V, – diF/dt = 100 A/µs

SEMITRANS 2

0896

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