TIPL762 datasheet(2/8 Pages) POINN

Part #	TIPL762

Description	NPN SILICON POWER TRANSISTORS

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Manufacturer	POINN [Power Innovations Ltd]

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TIPL762, TIPL762A

NPN SILICON POWER TRANSISTORS

2

AUGUST 1978 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(sus)

Collector-emitter

sustaining voltage

IC = 100 mA

L = 25 mH

(see Note 2)

TIPL762

TIPL762A

400

450

V

ICES

Collector-emitter

cut-off current

VCE = 850 V

VCE = 1000 V

VCE = 850 V

VCE = 1000 V

VBE = 0

TC = 100°C

TIPL762

TIPL762A

TIPL762

TIPL762A

50

200

µA

ICEO

Collector cut-off

current

VCE = 400 V

VCE = 450 V

IB = 0

TIPL762

TIPL762A

50

µA

IEBO

Emitter cut-off

current

VEB =

10 V

IC = 0

1

mA

hFE

Forward current

transfer ratio

VCE =

5 V

IC = 0.5 A

(see Notes 3 and 4)

20

60

VCE(sat)

Collector-emitter

saturation voltage

IB =

0.4 A

IB =

0.8 A

IB =

1.2 A

IB =

1.2 A

IC =

2 A

IC =

4 A

IC =

6 A

IC =

6 A

(see Notes 3 and 4)

TC = 100°C

0.5

1.0

2.5

5.0

V

VBE(sat)

Base-emitter

saturation voltage

IB =

0.4 A

IB =

0.8 A

IB =

1.2 A

IB =

1.2 A

IC =

2 A

IC =

4 A

IC =

6 A

IC =

6 A

(see Notes 3 and 4)

TC = 100°C

1.1

1.3

1.5

1.4

V

ft

Current gain

bandwidth product

VCE =

10 V

IC = 0.5 A

f =

1 MHz

6

MHz

Cob

Output capacitance

VCB =

20 V

IE = 0

f = 0.1 MHz

105

pF

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.25

°C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

tsv

Voltage storage time

IC = 6 A

VBE(off) = -10 V

IB(on) = 1.2 A

(see Figures 1 and 2)

2.5

µs

trv

Voltage rise time

200

ns

tfi

Current fall time

150

ns

tti

Current tail time

50

ns

txo

Cross over time

300

ns

tsv

Voltage storage time

IC = 6 A

VBE(off) = -10 V

IB(on) = 1.2 A

TC = 100°C

(see Figures 1 and 2)

3

µs

trv

Voltage rise time

300

ns

tfi

Current fall time

150

ns

tti

Current tail time

50

ns

txo

Cross over time

500

ns

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