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BS616UV1010DC10 Datasheet(PDF) 4 Page - Brilliance Semiconductor |
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BS616UV1010DC10 Datasheet(HTML) 4 Page - Brilliance Semiconductor |
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4 / 11 page  BS616UV1010 R0201-BS616UV1010 Revision 2.6 May. 2006 4 n DATA RETENTION CHARACTERISTICS (T A = -40 OC to +85OC) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VDR VCC for Data Retention CE≧VCC-0.2V VIN≧VCC-0.2V or VIN≦0.2V 1.5 -- -- V ICCDR (3) Data Retention Current CE≧VCC-0.2V VIN≧VCC-0.2V or VIN≦0.2V -- 0.01 0.5 uA tCDR Chip Deselect to Data Retention Time 0 -- -- ns tR Operation Recovery Time See Retention Waveform tRC (2) -- -- ns 1. VCC=1.5V, TA=25 OC and not 100% tested. 2. tRC = Read Cycle Time. 3. ICCDR(Max.) is 0.2uA at TA=70 OC. n LOW V CC DATA RETENTION WAVEFORM (CE Controlled) n AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Vcc / 0V Input Rise and Fall Times 1V/ns Input and Output Timing Reference Level 0.5Vcc tCLZ, tOLZ, tCHZ, tOHZ, tWHZ CL = 5pF+1TTL Output Load Others CL = 30pF+1TTL 1. Including jig and scope capacitance. n KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS OUTPUTS MUST BE STEADY MUST BE STEADY MAY CHANGE FROM “H” TO “L” WILL BE CHANGE FROM “H” TO “L” MAY CHANGE FROM “L” TO “H” WILL BE CHANGE FROM “L” TO “H” DON ’T CARE ANY CHANGE PERMITTED CHANGE : STATE UNKNOW DOES NOT APPLY CENTER LINE IS HIGH INPEDANCE “OFF” STATE Data Retention Mode VCC tCDR VCC tR VIH VIH CE≧VCC - 0.2V VDR≧1.5V CE VCC CL (1) 1 TTL Output ALL INPUT PULSES → ← 90% VCC GND Rise Time: 1V/ns Fall Time: 1V/ns 90% → ← 10% 10% |
Similar Part No. - BS616UV1010DC10 |
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