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BS616LV1010FIP55 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BS616LV1010FIP55 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
1 / 11 page Very Low Power CMOS SRAM 1M X 16 bit BS616LV1611 R0201-BS616LV1611 Revision 2.3 May. 2006 1 Pb-Free and Green package materials are compliant to RoHS n FEATURES Ÿ Wide V CC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA (Max.)at 55ns 2mA (Max.) at 1MHz Standby current : 1.5uA (Typ.) at 25 OC VCC = 5.0V Operation current : 115mA (Max.)at 55ns 10mA (Max.)at 1MHz Standby current : 6.0uA (Typ.) at 25 OC Ÿ High speed access time : -55 55ns(Max.) at VCC=3.0~5.5V -70 70ns(Max.) at VCC=2.7~5.5V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE2, CE1 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data retention supply voltage as low as 1.5V n DESCRIPTION The BS616LV1611 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 1.5uA at 3.0V/25 OC and maximum access time of 55ns at 3.0V/85 OC. Easy memory expansion is provided by an active LOW chip enable (CE1), active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BS616LV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1611 is available in 48-pin TSOP Type I package and 48-ball BGA package. n POWER CONSUMPTION POWER DISSIPATION STANDBY (ICCSB1, Max) Operating (ICC, Max) VCC=5.0V VCC=3.0V PRODUCT FAMILY OPERATING TEMPERATURE VCC=5.0V VCC=3.0V 1MHz 10MHz fMax. 1MHz 10MHz fMax. PKG TYPE BS616LV1611FC BGA-48-0912 BS616LV1611TC Commercial +0 OC to +70OC 50uA 8.0uA 9mA 48mA 113mA 1.5mA 19mA 45mA TSOP I-48 BS616LV1611FI BGA-48-0912 BS616LV1611TI Industrial -40 OC to +85OC 100uA 16uA 10mA 50mA 115mA 2mA 20mA 46mA TSOP I-48 n PIN CONFIGURATIONS n BLOCK DIAGRAM Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice. Address Input Buffer Row Decoder Memory Array 1024 x 16384 Column I/O Write Driver Sense Amp Column Decoder Address Input Buffer A16 A0 A1 A2 Data Input Buffer Control DQ0 . . . . . . DQ15 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 16 16 16 16 10 1024 16384 1024 10 A14 Data Output Buffer A18 CE2 CE1 WE OE UB LB VCC VSS A3 . . . . . . A17 A15 A19 A4 A3 A2 A1 A0 CE1 DQ0 DQ1 DQ2 DQ3 VCC NC VSS DQ4 DQ5 DQ6 DQ7 A19 WE A18 A17 A16 A15 A14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 BS616LV1611TC BS616LV1611TI 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A5 A6 A7 OE UB LB CE2 NC DQ15 DQ14 DQ13 DQ12 VSS VCC DQ11 DQ10 DQ9 DQ8 A8 A9 A10 A11 A12 A13 G H F E D C B A 1 2 3 4 5 6 A9 A11 A10 NC A12 A14 A13 A15 WE D13 D5 D7 D6 A17 A16 A7 VSS VCC D12 D11 D4 D3 NC A5 OE A3 A0 A6 A4 A1 A2 CE2 UB D10 D1 CE1 D2 D0 48-ball BGA top view LB D8 D9 VSS VCC D14 D15 A18 A19 A8 |
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