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BS616UV1010 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BS616UV1010 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
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1 / 11 page  Ultra Low Power CMOS SRAM 64K X 16 bit BS616UV1010 R0201-BS616UV1010 Revision 2.6 May. 2006 1 Pb-Free and Green package materials are compliant to RoHS n FEATURES Ÿ Wide V CC low operation voltage : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V Operation current : 15mA (Max.) at 100ns 1.0mA (Max.)at 1MHz Standby current : 0.01uA (Typ.)at 25 OC VCC = 3.0V Operation current : 20mA (Max.) at 100ns 2.0mA (Max.)at 1MHz Standby current : 0.02uA (Typ.)at 25 OC Ÿ High speed access time : -10 100ns (Max.) Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation Ÿ Data retention supply voltage as low as 1.5V n DESCRIPTION The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 by 16 bits and operates form a wide range of 1.9V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.01uA at 2.0V/25 OC and maximum access time of 100ns at 2.0V/85 OC. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616UV1010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV1010 is available in DICE form, JEDEC standard 44-pin TSOP II and 48-ball BGA package. n POWER CONSUMPTION POWER DISSIPATION STANDBY (ICCSB1, Max) Operating (ICC, Max) VCC=3.0V VCC=2.0V PRODUCT FAMILY OPERATING TEMPERATURE VCC=3.0V VCC=2.0V 1MHz fMax. 1MHz fMax. PKG TYPE BS616UV1010DC DICE BS616UV1010AC BGA-48-0608 BS616UV1010EC Commercial +0 OC to +70OC 1.0uA 0.5uA 1.5mA 18mA 0.8mA 13mA TSOP II-44 BS616UV1010AI BGA-48-0608 BS616UV1010EI Industrial -40 OC to +85OC 1.5uA 1.0uA 2.0mA 20mA 1.0mA 15mA TSOP II-44 n PIN CONFIGURATIONS n BLOCK DIAGRAM Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice. A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC VSS DQ4 DQ5 DQ6 DQ7 WE A15 A14 A13 A12 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 BS616UV1010EC BS616UV1010EI 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 VSS VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC G H F E D C B A 1 2 3 4 5 6 A9 A11 A10 NC A12 A14 A13 A15 WE D13 D5 D7 D6 NC NC A7 VSS VCC D12 D11 D4 D3 NC A5 OE A3 A0 A6 A4 A1 A2 NC UB D10 D1 CE D2 D0 48-ball BGA top view LB D8 D9 VSS VCC D14 D15 NC NC A8 Address Input Buffer Row Decoder Memory Array 512 x 2048 Column I/O Write Driver Sense Amp Column Decoder Address Input Buffer A9 A2 A1 A0 Data Input Buffer Control DQ0 . . . . . . DQ15 A8 A13 A15 A14 A12 A7 A6 A5 A4 16 16 16 16 7 128 2048 512 9 A11 Data Output Buffer A3 CE WE OE UB LB VCC VSS A10 . . . . . . |
Similar Part No. - BS616UV1010_06 |
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