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BH616UV8010DIP70 Datasheet(PDF) 5 Page - Brilliance Semiconductor

Part # BH616UV8010DIP70
Description  Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BH616UV8010DIP70 Datasheet(HTML) 5 Page - Brilliance Semiconductor

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BH616UV8010
R0201-BH616UV8010
Revision
1.2
May.
2006
5
n AC ELECTRICAL CHARACTERISTICS (T
A = -40
OC to +85OC)
READ CYCLE
CYCLE TIME : 55ns
CYCLE TIME : 70ns
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tRC
Read Cycle Time
55
--
--
70
--
--
ns
tAVQX
tAA
Address Access Time
--
--
55
--
--
70
ns
tE1LQV
tACS1
Chip Select Access Time
(CE1)
--
--
55
--
--
70
ns
tE2LQV
tACS2
Chip Select Access Time
(CE2)
--
--
55
--
--
70
ns
tBLQV
tBA
Data Byte Control Access Time
(LB, UB)
--
--
55
--
--
70
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
30
--
--
35
ns
tE1LQX
tCLZ1
Chip Select to Output Low Z
(CE1)
10
--
--
10
--
--
ns
tE2LQX
tCLZ2
Chip Select to Output Low Z
(CE2)
10
--
--
10
--
--
ns
tBLQX
tBE
Data Byte Control to Output Low Z
(LB, UB)
10
--
--
10
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
5
--
--
5
--
--
ns
tE1HQZ
tCHZ1
Chip Select to Output High Z
(CE1)
--
--
25
--
--
30
ns
tE2HQZ
tCHZ2
Chip Select to Output High Z
(CE2)
--
--
25
--
--
30
ns
tBHQZ
tBDO
Data Byte Control to Output High Z (LB, UB)
--
--
25
--
--
30
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
25
--
--
30
ns
tAVQX
tOH
Data Hold from Address Change
10
--
--
10
--
--
ns
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
tRC
tOH
tAA
DOUT
ADDRESS
tOH


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