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HERAF1003G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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HERAF1003G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  Dimensions in inches and (millimeters) Version: A06 HERAF1001G - HERAF1008G Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers ITO-220AC .071(1.8) MAX .161(4.1) .146(3.7) .118(3.00) .124(3.16) .185(4.7) .173(4.4) .272(6.9) .248(6.3) .063(1.6) MAX .100(2.55) .543(13.8) .512(13.2) .100(2.55) .110(2.8) .098(2.5) .606(15.5) .583(14.8) .112(2.85) .100(2.55) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA .043(1.1) .020(0.5) .035(0.9) .055(1.4) .030(0.76) .020(0.50) 2 PIN 1 PIN 2 Case Positive CASE Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. Mechanical Data Cases: ITO-220AC molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds 0.25”,(6.35mm) from case. Mounting torque : 5 in – 1bs. max. Weight: 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HERAF 1001G HERAF 1002G HERAF 1003G HERAF 1004G HERAF 1005G HERAF 1006G HERAF 1007G HERAF 1008G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current @TC =100 oC I(AV) 10 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Maximum Instantaneous Forward Voltage @10.0A VF 1.0 1.3 1.7 V Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC IR 10 400 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 50 80 nS Typical Junction Capacitance ( Note 2 ) Cj 80 60 pF Typical Thermal Resistance (Note 3) RθJC 2.0 oC/W Operating Temperature Range TJ -65 to +150 oC Storage Temperature Range TSTG -65 to +150 oC Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. |
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