BH62UV8001DI55 datasheet(5/9 Pages) BSI

Part #	BH62UV8001DI55

Description	Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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BH62UV8001

R0201-BH62UV8001

Revision

1.1

May

2006

5

n SWITCHING WAVEFORMS (READ CYCLE)

READ CYCLE 1

(1,2,4)

READ CYCLE 2

(1,3,4)

READ CYCLE 3

(1, 4)

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE1 = VIL and CE2= VIH.

3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.

4. OE = VIL.

5. Transition is measured ± 500mV from steady state with CL = 5pF.

The parameter is guaranteed but not 100% tested.

tRC

tOH

tAA

DOUT

ADDRESS

tOH

tCLZ

(5)

DOUT

CE2

CE1

tACS2

tACS1

tCHZ1, tCHZ2

(5)

tOH

tRC

tOE

tCLZ2

(5)

tCHZ2

(2,5)

DOUT

CE2

CE1

OE

ADDRESS

tCLZ1

(5)

tACS1

tACS2

tCHZ1

(1,5)

tOHZ

(5)

tOLZ

tAA

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BH62UV8001DI55 Datasheet(PDF) 5 Page - Brilliance Semiconductor

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