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16 Megabit Concurrent SuperFlash

SST36VF1601 / SST36VF1602

Advance Information

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© 2000 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Concurrent SuperFlash is a trademark of Silicon Storage Technology, Inc.

373-3 11/00

S71142

These specifications are subject to change without notice.

FEATURES:

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Organized as 1M x16

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Dual-Bank Architecture for Concurrent

Read/Write Operation

– 16 Mbit Bottom Sector Protection

- SST36VF1601: 12 Mbit + 4 Mbit

– 16 Mbit Top Sector Protection

- SST36VF1602: 4 Mbit + 12 Mbit

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Single 2.7-3.6V Read and Write Operations

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Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

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Low Power Consumption:

– Active Current: 25 mA (typical)

– Standby Current: 4 µA (typical)

– Auto Low Power Mode: 4 µA (typical)

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Hardware Sector Protection/WP# Input Pin

– Protects 4 outer most sectors (4 KWord) in the

larger bank by driving WP# low and unprotects

by driving WP# high

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Hardware Reset Pin (RESET#)

– Resets the internal state machine to reading

data array

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Sector-Erase Capability

– Uniform 1 KWord sectors

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Block-Erase Capability

– Uniform 32 KWord blocks

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Read Access Time

– 70 and 90 ns

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Latched Address and Data

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Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time: 8 seconds (typical)

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Automatic Write Timing

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End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

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CMOS I/O Compatibility

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Conforms to Common Flash Memory

Interface (CFI)

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JEDEC Standards

– Flash EEPROM Pinouts and command sets

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Packages Available

– 48-Pin TSOP (12mm x 20mm)

– 48-Ball TFBGA (8mm x 10mm)

PRODUCT DESCRIPTION

The SST36VF1601/1602 are 1M x16 CMOS Concurrent

Read/Write Flash Memory manufactured with SST’s pro-

prietary, high performance CMOS SuperFlash technol-

ogy. The split-gate cell design and thick oxide tunneling

injector attain better reliability and manufacturability com-

pared with alternate approaches.The SST36VF1601/

1602 write (Program or Erase) with a 2.7-3.6V power

supply. The SST36VF1601/1602 devices conform to

JEDEC standard pinouts for x16 memories.

Featuring high performance Word-Program, the

SST36VF1601/1602 devices provide a typical Word-Pro-

gram time of 14 µsec. The devices use Toggle Bit or Data#

Polling to detect the completion of the Program or Erase

operation. To protect against inadvertent write, the

SST36VF1601/1602 devices have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, the

SST36VF1601/1602 devices are offered with a guaran-

teed endurance of 10,000 cycles. Data retention is rated

at greater than 100 years.

The SST36VF1601/1602 are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applica-

tions, the SST36VF1601/1602 significantly improve per-

formance and reliability, while lowering power consump-

tion. The SST36VF1601/1602 inherently use less energy

during Erase and Program than alternative flash technolo-

gies. The total energy consumed is a function of the

applied voltage, current, and time of application. Since for

any given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time, the

total energy consumed during any Erase or Program

operation is less than alternative flash technologies. The

SST36VF1601/1602 also improve flexibility while lower-

ing the cost for program, data, and configuration storage

applications.

The SuperFlash technology provides fixed Erase and

Program times, independent of the number of Erase/

Program cycles that have occurred. Therefore the sys-

tem software or hardware does not have to be modified or

de-rated as is necessary with alternative flash technolo-