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TICP107M Datasheet(PDF) 2 Page - Power Innovations Ltd |
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TICP107M Datasheet(HTML) 2 Page - Power Innovations Ltd |
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2 / 6 page  TICP107 SERIES SILICON CONTROLLED RECTIFIERS 2 JANUARY 1999 - REVISED JUNE 2000 PRODUCT INFORMATION NOTE 5: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. electrical characteristics at 25°C ambient temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off-state current VD = rated VDRM RGK = 1 kΩ 20 µA IRRM Repetitive peak reverse current VR = rated VRRM IG = 0 200 µA IGT Gate trigger current VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 50 200 µA VGT Gate trigger voltage VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 0.4 1 V IH Holding current VAA = 12 V Initiating IT = 10 mA 2 mA VT On-state voltage IT = 2 A (see Note 5) 1.4 V |
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