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BUZ110SE3045A Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # BUZ110SE3045A
Description  SIPMOS짰 Power Transistor
Download  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ110SE3045A Datasheet(HTML) 7 Page - Infineon Technologies AG

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BUZ 110S
Data Book
7
05.99
Drain-source on-resistance
RDS(on) = f (Tj)
parameter :
ID = 66 A, VGS = 10 V
-60
-20
20
60
100
140
˚C
200
Tj
0.000
0.004
0.008
0.012
0.016
0.020
0.024
0.028
Ω
0.034
BUZ110S
typ
98%
Gate threshold voltage
VGS(th) = f (Tj)
parameter :
VGS = VDS, ID = 200 µA
-60
-20
20
60
100
140
˚C
200
Tj
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
V
5.0
min
typ
max
Typ. capacitances
C =
f (VDS)
parameter:
VGS = 0 V, f = 1 MHz
0
10
20
V
40
VDS
2
10
3
10
4
10
pF
Ciss
Coss
Crss
Forward characteristics of reverse diode
IF = f (VSD)
parameter:
Tj , tp = 80 µs
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
0
10
1
10
2
10
3
10
A
BUZ110S
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 175 ˚C typ
T
j = 175 ˚C (98%)


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