Electronic Components Datasheet Search |
|
BUZ110SE3045A Datasheet(PDF) 7 Page - Infineon Technologies AG |
|
BUZ110SE3045A Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 8 page BUZ 110S Data Book 7 05.99 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 66 A, VGS = 10 V -60 -20 20 60 100 140 ˚C 200 Tj 0.000 0.004 0.008 0.012 0.016 0.020 0.024 0.028 Ω 0.034 BUZ110S typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS, ID = 200 µA -60 -20 20 60 100 140 ˚C 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 min typ max Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz 0 10 20 V 40 VDS 2 10 3 10 4 10 pF Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 0 10 1 10 2 10 3 10 A BUZ110S T j = 25 ˚C typ T j = 25 ˚C (98%) T j = 175 ˚C typ T j = 175 ˚C (98%) |
Similar Part No. - BUZ110SE3045A |
|
Similar Description - BUZ110SE3045A |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |