TIC226 SERIES

SILICON TRIACS

4

APRIL 1971 - REVISED MARCH 1997

PRODUCT

INFORMATION

TYPICAL CHARACTERISTICS

Figure 7.

Figure 8.

PARAMETER MEASUREMENT INFORMATION

MAX RMS ON-STATE CURRENT

T

0

25

50

75

100

125

150

0

1

2

3

4

5

6

7

8

9

10

TI01AB

CASE TEMPERATURE

vs

MAX AVERAGE POWER DISSIPATED

I

0

2

4

6

8

10

12

14

16

0

4

8

12

16

20

24

28

32

TI01AC

RMS ON-STATE CURRENT

vs

Conduction Angle = 360 °

Above 8 A rms

T

See I

V

AC

V

MT2

I

MT2

DUT

See

Note A

R

G

C1

R1

I

G

V

AC

I

MT2

V

MT2

I

G

I

TRM

dv/dt

10%

63%

L1

V

DRM

50 Hz

PMC2AA

NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed

so that the off-state-voltage duration is approximately 800 µs.

Figure 9.