TIC116 datasheet(2/6 Pages) POINN

Part #	TIC116

Description	SILICON CONTROLLED RECTIFIERS

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Manufacturer	POINN [Power Innovations Ltd]

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TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

2

APRIL 1971 - REVISED JUNE 2000

PRODUCT

INFORMATION

NOTE

5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from

the current carrying contacts, are located within 3.2 mm from the device body.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IDRM

Repetitive peak

off-state current

VD = rated VDRM

TC = 110°C

2

mA

IRRM

Repetitive peak

reverse current

VR = rated VRRM

IG = 0

TC = 110°C

2

mA

IGT

Gate trigger current

VAA = 12 V

RL = 100 Ω

tp(g) ≥ 20 µs

8

20

mA

VGT

Gate trigger voltage

VAA = 12 V

tp(g) ≥ 20 µs

RL = 100 Ω

TC = - 40°C

2.5

V

VAA = 12 V

tp(g) ≥ 20 µs

RL = 100 Ω

0.8

1.5

VAA = 12 V

tp(g) ≥ 20 µs

RL = 100 Ω

TC = 110°C

0.2

IH

Holding current

VAA = 12 V

Initiating IT = 100 mA

TC = - 40°C

100

mA

VAA = 12 V

Initiating IT = 100 mA

40

VT

On-state

voltage

IT = 8 A

(see Note 5)

1.7

V

dv/dt

Critical rate of rise of

off-state voltage

VD = rated VD

IG = 0

TC = 110°C

400

V/µs

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

3

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

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