TIC108 datasheet(2/8 Pages) POINN

Part #	TIC108

Description	SILICON CONTROLLED RECTIFIERS

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Manufacturer	POINN [Power Innovations Ltd]

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TIC108 SERIES

SILICON CONTROLLED RECTIFIERS

2

APRIL 1971 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTE

6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from

the current carrying contacts, are located within 3.2 mm from the device body.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IDRM

Repetitive peak

off-state current

VD = rated VDRM

RGK = 1 kΩ

TC = 110°C

400

µA

IRRM

Repetitive peak

reverse current

VR = rated VRRM

IG = 0

TC = 110°C

1

mA

IGT

Gate trigger current

VAA = 6 V

RL = 100 Ω

tp(g) ≥ 20 µs

0.2

1

mA

VGT

Gate trigger voltage

VAA = 6 V

tp(g) ≥ 20 µs

RL = 100 Ω

RGK = 1 kΩ

TC = - 40°C

1.2

V

VAA = 6 V

tp(g) ≥ 20 µs

RL = 100 Ω

RGK = 1 kΩ

0.4

0.6

1

VAA = 6 V

tp(g) ≥ 20 µs

RL = 100 Ω

RGK = 1 kΩ

TC = 110°C

0.2

IH

Holding current

VAA = 6 V

Initiating IT = 20 mA

RGK = 1 kΩ

TC = - 40°C

15

mA

VAA = 6 V

Initiating IT = 20 mA

RGK = 1 kΩ

10

VTM

Peak on-state

voltage

ITM = 5 A

(see Note 6)

1.7

V

dv/dt

Critical rate of rise of

off-state voltage

VD = rated VD

RGK = 1 kΩ

TC = 110°C

80

V/µs

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

3.5

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

tgt

Gate-controlled

turn-on time

IT = 5 A

IG = 10 mA

See Figure 1

2.9

µs

tq

Circuit-commutated

turn-off time

IT = 5 A

IRM = 8 A

See Figure 2

13.3

µs

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