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SA58670BS Datasheet(PDF) 10 Page - NXP Semiconductors |
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SA58670BS Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 18 page SA58670_1 © NXP B.V. 2007. All rights reserved. Objective data sheet Rev. 01 — 22 June 2007 10 of 18 NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 11.3 PCB layout considerations Component location is very important for performance of the SA58670. Place all external components very close to the device. Placing decoupling capacitors directly at the power supply pins increases efficiency because the resistance and inductance in the trace between the device power supply pins and the decoupling capacitor causes a loss in power efficiency. The trace width and routing are also very important for power output and noise considerations. For high current terminals (PVDD, PGND and audio output), the trace widths should be maximized to ensure proper performance and output power. Use at least 500 µm wide traces. For the input pins (INRP/INRN and INLP/INLN), the traces must be symmetrical and run side-by-side to maximize common-mode cancellation. 11.4 Filter-free operation and ferrite bead filters A ferrite bead low-pass filter can be used to reduce radio frequency emissions in applications that have circuits sensitive to greater than 1 MHz. A ferrite bead low-pass filter functions well for amplifiers that must pass FCC unintentional radiation requirements at greater than 30 MHz. Choose a bead with high-impedance at high frequencies and very low-impedance at low frequencies. In order to prevent distortion of the output signal, select a ferrite bead with adequate current rating. For applications in which there are circuits that are EMI sensitive to low frequency (<1 MHz) and there are long leads from amplifier to speaker, it is necessary to use an LC output filter. 11.5 Efficiency and thermal considerations The maximum ambient operating temperature depends on the heat transferring ability of the heat spreader on the PCB layout. In Table 3 “Limiting values”, power dissipation, the power derating factor is given as 41.6 mW/ °C. The device thermal resistance, R th(j-a) is the reciprocal of the power derating factor. Convert the power derating factor to Rth(j-a) by the following equation: (3) For a maximum allowable junction temperature, Tj =150 °C and Rth(j-a) =24 °C/W and a maximum device dissipation of 1.5 W (750 mW per channel) and for 2.1 W per channel output power, 4 Ω load, 5 V supply, the maximum ambient temperature is calculated using Equation 4: (4) The maximum ambient temperature is 114 °C at maximum power dissipation for 5 V supply and 4 Ω load. If the junction temperature of the SA58670 rises above 150 °C, the thermal protection circuitry turns the device off; this prevents damage to IC. Using speakers greater than 4 Ω further enhances thermal performance and battery lifetime by reducing the output load current and increasing amplifier efficiency. R th j-a () 1 derating factor ----------------------------------------- 1 0.0413 ---------------- 24 °C/W == = T amb max () T jmax () R th j-a () P Dmax () × () – 150 24 1.5 × () – 114 °C == = |
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