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PS4531EAP Datasheet(PDF) 8 Page - Pericom Semiconductor Corporation |
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PS4531EAP Datasheet(HTML) 8 Page - Pericom Semiconductor Corporation |
8 / 16 page 8 PS8591D 11/17/04 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 PS4530/PS4531/PS4532 Precision 8-Ch, 2-Ch, Latched Analog Multiplexers/Switches Electrical Characteristics - Single 3V Supply (V+ = +2.7V to 3.6V, V– = –0V, GND = 0V, VADD_H = VEN_H = VLE = 2.4V, VADD_L = VEN_L = 0.5V, TA = TMIN to TMAX, unless otherwise noted) Notes: 2. The algebraic convention, where the most negative value is a minimum and the most positive is a maximum, is used in this data sheet. 3. Guaranteed by design 4. ∆RΟΝ = RΟΝ (max) - RΟΝ (min) 5. Flatness is defined as the difference between the maximum and minimum value of on-resistance measured over the specified analog ranges, i.e., VNO = 3V to 0V and 0V to –3V. 6. Leakage parameters are 100% tested at maximum rated hot temperature and guaranteed by correlation at TA = +25ºC. 7. Worst-case isolation is on channel 4 because of its proximity to the COM pin. Off isolation = 20log VCOM/VNO, VCOM = output, VNO = input to off switch 8. Leakage testing at single supply is guaranteed by testing with dual supplies. r e t e m a r a Pl o b m y Ss n o i t i d n o Cn i M ) 2 ( p y T ) 2 ( x a M ) 2 ( s t i n U h c t i w S e g a n R l a n g i S g o l a n AV G O L A N A 3 e t o N0 + VV e c n a t s i s e R - n OR N O I O N V , A m 1 = M O C V 5 . 1 = V 7 . 2 = + V TA C ° 5 2 + =5 75 8 1 m h O TA T = N I M T o t X A M 0 5 2 c i m a n y D e m i T n o it s i s n a r T ) 3 ( t S N A R T V , 1 e r u g i F N I V 4 . 2 = V 1 O N V , V 5 . 1 = 8 O N V 0 = TA C ° 5 2 + = 0 5 10 5 3 s n e m i T n O - n r u T e l b a n E ) 3 ( t ) N E ( N O V , 3 e r u g i F H N I V 4 . 2 = V L N I V , V 0 = 1 O N V 5 . 1 = 0 5 10 5 3 e m i T f f O - n r u T e l b a n E ) 3 ( t ) N E ( F F O V , 3 e r u g i F H N I V 4 . 2 = V L N I V , V 0 = 1 O N V 5 . 1 = 0 60 5 1 l e n n a h C , e m i T p U - t e S e l b a n E h c t a L o t t c e l e S tS 3 e t o N 0 0 1 e l b a n E h c t a L , e m i T d l o H t c e l e S l e n n a h C o t tH 0 e l b a n E h c t a L , h t d i W e s l u Pt W P M 0 2 1 |
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