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RD30HUF1 Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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RD30HUF1 Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 7 page  MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=480MHz Zin f=440MHz Zout f=480MHz Zout Zo=10 Ω f=440MHz Zin Zin , Zout F Zin Zout (MHz) (ohm) (ohm) Conditions 440 1.16-j0.14 1.17+j0.74 Po=40W, Vdd=12.5V,Pin=3.0W 480 0.90+j0.35 1.15+j1.07 Po=38W, Vdd=12.5V,Pin=3.0W 520 0.88+j0.84 1.47+j1.24 Po=35W, Vdd=12.5V,Pin=3.0W 5/7 |
Similar Part No. - RD30HUF1_06 |
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Similar Description - RD30HUF1_06 |
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