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BDV65B Datasheet(PDF) 2 Page - Power Innovations Ltd |
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BDV65B Datasheet(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS 2 JUNE 1993 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 (see Note 4) BDV65 BDV65A BDV65B BDV65C 60 80 100 120 V ICEO Collector-emitter cut-off current VCB = 30 V VCB = 40 V VCB = 50 V VCB = 60 V IB = 0 IB = 0 IB = 0 IB = 0 BDV65 BDV65A BDV65B BDV65C 2 2 2 2 mA ICBO Collector cut-off current VCB = 60 V VCB = 80 V VCB = 100 V VCB = 120 V VCB = 30 V VCB = 40 V VCB = 50 V VCB = 60 V IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C 0.4 0.4 0.4 0.4 2 2 2 2 mA IEBO Emitter cut-off current VEB = 5 V IC = 0 5 mA hFE Forward current transfer ratio VCE = 4 V IC = 5 A (see Notes 4 and 5) 1000 VCE(sat) Collector-emitter saturation voltage IB = 20 mA IC = 5 A (see Notes 4 and 5) 2 V VBE Base-emitter voltage VCE = 4 V IC = 5 A (see Notes 4 and 5) 2.5 V VEC Parallel diode forward voltage IE = 10 A IB = 0 (see Notes 4 and 5) 3.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W |
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